MB-MDP | As semiconductor devices push into the 28-nm process node and beyond, new techniques are needed to extend the viability of 193-nm immersion (193i) optical lithography. Process window (PW) – the accuracy tolerances necessary to produce viable chips on the wafer – is a primary concern. Poor PW results in poor yield. Aggressive optical proximity correction (OPC) techniques that aim to preserve sufficient PW have resulted in impractical photomask write-times. In response, several new technologies known as DFeB have emerged in recent years to speed e-Beam mask writing throughput. The newest of these DFeB technologies is model-based mask data preparation (MB-MDP), which utilizes overlapping e-Beam shots to enable complex OPC features for improving PW with fewer shots. MB-MDP and overlapping e-Beam shots benefit today’s masks for 193i lithography and offer important support for masks that will be used with tomorrow’s EUV systems
MPC | Because MB-MDP simulates the effects of shots on the mask plane and produces the desired contour at the resist threshold, MB-MDP provides built-in mask process correction (MPC). With this MPC effect, MB-MDP enhances the size and/or dose of sub-100-nm features today.

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Unique techniques used by D2S MB-MDP
D2S MB-MDP reduces shot count by 30% or more